Sim time08:00:00
Speed60×
Shift A · Day 1

Andon

Severity-ranked alert wall with Bayesian root-cause attribution.
3 crit/high3 med/low0 info
Open alerts
6
Critical / High
3
Medium / Low
3
Window sample
30
modules in last 30

Likely root causes (Bayesian)

M45M44M82M58
Δ: Voc -0.0 mV · Pmax -0.04 W · FF -0.00 pp · crack +49.5%
Candidate causeSubsystemPriorPosterior
#1PECVD i-layer thinning (epi onset)PECVD17.3%
0.0%
#2PECVD i-layer overgrowthPECVD5.8%
0.0%
#3PECVD chamber temperature drift +25°CPECVD9.6%
0.0%
#4PECVD RF power excursionPECVD4.8%
0.0%
#5H2 dilution out-of-band (low)PECVD3.8%
0.0%

CRITICAL · 1

CRITICALt=281.0
Vacuum pump 1 pressure spike → 47 mbar (target ≤ 8)
station: lamination
Switch to standby pump and isolate primary

HIGH · 2

HIGHt=315.0
Chamber 3 i-layer thickness drift −1.2 nm over 18 modules
station: pecvd
Recalibrate flow-meter F-103 and resample
HIGHt=337.0
Target life 17% — sheet resistance creeping +6 Ω/□
station: tco
Schedule target swap within 90 min
ack @ 339.0

MEDIUM · 3

MEDIUMt=442.0
Microcrack rate 2.4% over last 50 modules (band 1.0%)
station: stringing
Reduce ribbon tension by 0.3 N on Stringer-2
ack @ 444.0
MEDIUMt=86.0
Peak temperature −4 °C from setpoint (zone 2)
station: curing
Inspect zone-2 IR emitter array
ack @ 88.0
MEDIUMt=206.0
RCA-2 bath age 28 h — Dit baseline drifting
station: cleaning
Refresh chemistry, log new baseline
ack @ 208.0

Recently cleared · 8

  • t=199.0infoFPY 96.8% (24h), trending +0.4 ppcleared @ 213.2
  • t=301.0infoChamber 1 PM scheduled in 14 h (300 h cumulative)cleared @ 308.3
  • t=204.0infoITO targets at 4/8 — within reorder envelopecleared @ 209.9
  • t=325.0infoPlant kWh/module +3.4% vs 24h baselinecleared @ 360.0
  • t=327.0lowCure α at vacuum release 0.41 (band ≥ 0.45)cleared @ 332.3
  • t=369.0lowO₂/Ar ratio 2.18 (band 1.5–2.5)cleared @ 382.8
  • t=235.0lowSolder iron 3 dwell variance ↑ 12%cleared @ 241.1
  • t=108.0lowFinger width avg 33 µm (target 30)cleared @ 142.3