Sim time08:00:00
Speed60×
Shift A · Day 1

Physics Validation

Back-test of every model against public HJT industry data, with coupling, uncertainty and inverse solver.
0/5 models passavg R² 0.226
M26M33M35M38M45M62M96M97M99

PECVD i-layer → implied Voc

FAIL
0.504
min 0.92
RMSE
16.46 mV
max 12
MAPE
1.5%
N = 11
Adachi 2015; Descoeudres 2013; Yoshikawa 2017

Single-diode J0 → Voc at Jsc=39 mA/cm²

FAIL
0.154
min 0.97
RMSE
18.47 mV
max 8
MAPE
2.5%
N = 6
Green 2013 'Solar Cell Fill Factors'; ITRPV 2024

Kamal-Sourour EVA cure at 600 s

FAIL
0.822
min 0.93
RMSE
0.095 α
max 0.08
MAPE
15.4%
N = 6
Kempe 2007 (NREL); Hirschl 2013

Microcrack probability vs ribbon tension

FAIL
0.045
min 0.9
RMSE
0.078 P(crack)
max 0.04
MAPE
75.1%
N = 7
Beinert 2019 (Fraunhofer ISE); Kajari-Schroeder 2012

Bearing BPFO amplitude vs health decay

FAIL
-0.393
min 0.95
RMSE
2.52 g (norm)
max 0.5
MAPE
73.2%
N = 6
RKB Bearing Handbook accelerated-life rig

Normalized residuals (all models)

Dashed lines = ±5 % envelope. Most points should sit inside.

Monte-Carlo uncertainty (N=400)

95 % CI
KPIMeanσ95 % CI
Efficiency η23.23%±0.09%[23.07%, 23.39%]
Voc738.6 mV±0.3 mV[737.9 mV, 739.1 mV]
Pmax6.37 W±0.02 W[6.33 W, 6.42 W]
Fill Factor83.29%±0.04%[83.21%, 83.37%]
iVoc739.6 mV±0.1 mV[739.5 mV, 739.6 mV]
J012.45 fA/cm²±0.15 fA/cm²[12.25 fA/cm², 12.81 fA/cm²]
Inputs perturbed: i-layer ±5 %, T ±1.5 %, RF ±8 %, H₂ ±6 %, doping ±3 %, TCO scan ±3 %, finger width ±6 %, wafer ±6 %, tension ±8 %.

End-to-end coupling: recipe → economics

Δ Pmax
+2.00 W
Δ Yield
+37.4%
Δ Fleet NPV
$-162.48 M
100 MWdc, 25 yr
Δ Warranty / 1k
+1.6
Variant: i-layer 4.5 nm (thin), ribbon tension 5.5 N. Walks the full chain: cell IV → microcracks → module Pmax → 25-yr LeTID/crack-growth → discounted PPA revenue.
Cell η23.45%
Stringer crack P3.50%
Module Pmax (BOL)425.1 W
Module Pmax (25 y)384.7 W
Annual degradation0.36%/yr
Warranty claims / 1k4.8

Bayesian root-cause solver

Observed Δ: voc_mV=-12 ff_pct=-0.4
CandidateCategoryPriorPosterior
#1PECVD i-layer thinning (epi onset)PECVD17.3%
97.1%
#2H2 dilution out-of-band (low)PECVD3.8%
2.4%
#3PECVD chamber temperature drift +25°CPECVD9.6%
0.4%
#4PECVD RF power excursionPECVD4.8%
0.1%
#5PECVD i-layer overgrowthPECVD5.8%
0.0%
#6TCO target poisoningTCO11.5%
0.0%
#7Screen-print finger spreadingPrint7.7%
0.0%
#8Stringer ribbon over-tensionStringer10.6%
0.0%
Method: forward-model each candidate fault, score Gaussian likelihood against observed Δ, multiply by ITRPV-2024 prior, normalize.