Sim time08:00:00
Speed60×
Shift A · Day 1

Physics Lab

Live-coupled HJT process models — every slider re-solves the underlying physics in <16 ms
M23M24M25M26M27M33M35M44M45M52M62M63M64M65M71M73M96M97
Wafer & Cell
Module
System & Inference
ML & Control

PECVD a-Si:H passivation

M23

The single highest-leverage knob in the entire factory. i-layer below ~4 nm triggers epitaxial growth → D_it spike; above ~9 nm, parasitic absorption eats J_sc. Calibrated to Kaneka / LONGi public iV_oc 745 mV @ nominal.

i-layer (nm)6.00
Deposition T (°C)200
RF power (mW/cm²)50
H₂ dilution (%)20
D_it
1.08e+10
iV_oc
744.4 mV
J_0
8.37 fA/cm²
S_eff
2.80 cm/s

Hero MPC controller M63 holds i-layer to ±0.05 nm by closing on plasma OES (M23) and downstream iV_oc soft-sensor (M28).

iV_oc · i-layer sweep

M26
nowi-layer (nm)iV_oc (mV)755.0680.0
nowi-layer (nm)log₁₀ D_it12.09.8

Epitaxial cliff visible as the steep iV_oc drop < 4 nm. Safe band 5–8 nm shaded.