PECVD a-Si:H
Station #4 · cell side · ×6 parallel · 240s cycle
running
Availability
98.0%
Performance
95.5%
Quality
94.2%
WIP
0
926 processed · 32 rejected
PECVD a-Si:H — passivation physics
iVoc vs i-layer thickness
iVoc = 739.6 mV · target ≥740
log₁₀(Dit) vs thickness
Dit = 2.00e+10 cm⁻²eV⁻¹ · Seff 3.90 cm/s
J₀ vs thickness
J₀ = 12.20 fA/cm² · η_pred 23.13%
Operating window 5.5–8 nm. Below 4 nm: epitaxial growth → Dit spike. Above 220 °C: hydrogen effusion. RF > 60 mW/cm² damages a-Si network.
Hero physics — live levers
Adjustments mutate the active recipe and propagate through the physics chain on the next tick. Changes are logged in the lever tracker.
i-layer thickness6.00 nm
range 3–15
Deposition T200 °C
range 150–250
RF power density30 mW/cm²
range 10–80
H₂/SiH₄20.00
range 5–50
Chamber pressure500 mTorr
range 200–1000
Recent events
Lever-tracker filtered to this station:
| t | Param | Old → New |
|---|---|---|
| 477.6 | iLayerNm | 6 → 5.8 |
| 445.0 | h2Dilution | 20 → 22 |